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savantic semiconductor product specification silicon npn power transistors 2SD1375 description with to-3 package high breakdown voltage high power dissipation applications designed for line operated audio output amplifier ,and switching power supply drivers applications pinning(see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 300 v v ceo collector-emitter voltage open base 300 v v ebo emitter-base voltage open collector 7 v i c collector current 4 a p c collector power dissipation t c =75 90 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-3) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SD1375 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =30ma ;i b =0 300 v v (br)cbo collector-base breakdown voltage i c =1ma ;i e =0 300 v v (br)ebo emitter-base breakdown voltage i e =1ma ;i c =0 7 v v cesat collector-emitter saturation voltage i c =3a; i b =0.6a 1.0 v v besat base-emitter saturation voltage i c =3a; i b =0.6a 1.5 v i cbo collector cut-off current v cb =300v; i e =0 0.1 ma i ebo emitter cut-off current v eb =7v; i c =0 0.1 ma h fe dc current gain i c =1a ; v ce =5v 30 savantic semiconductor product specification 3 silicon npn power transistors 2SD1375 package outline fig.2 outline dimensions (unindicated tolerance: 0.1mm) |
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